| PART |
Description |
Maker |
| AH276Q-PG-B-A AH276Q-PG-B-B AH276Q-PG-B-C AH276Q-P |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4
MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4
|
Diodes Incorporated
http://
Diodes, Inc.
|
| HAL825UT-A HAL825UT-K HAL824UT-A HAL824UT-K HAL82X |
MAGNETIC FIELD SENSOR-HALL EFFECT, -.5-0.5mT, RECTANGULAR, THROUGH HOLE MOUNT
High-Precision Programmable Linear Hall-Effect Sensor Family
|
MICRONAS SEMICONDUCTOR HOLDING AG
|
| HAL505SF-E |
IC HALL EFFECT SENSOR SOT-89B MAGNETIC FIELD SENSOR-HALL EFFECT, -17-17mT, 0.13-0.28V, RECTANGULAR, SURFACE MOUNT
|
Micronas Semiconductor Holding AG
|
| HAL800 HAL800UT-A HAL800UT-K |
Programmable Linear Hall Effect Sensor 可编程线性霍尔效应传感器
Programmable Linear Hall Effect Sensor MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.80V, RECTANGULAR, THROUGH HOLE MOUNT
|
Micronas Semiconductor Holding AG
|
| SK1901L-AE3-R SK1901-G03-K |
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, RECTANGULAR, SURFACE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, RECTANGULAR, THROUGH HOLE MOUNT
|
UNISONIC TECHNOLOGIES CO LTD
|
| AH276Z4-BE1 AH276Z4-AE1 AH276Z4-E1 AH276 AH276Z4-C |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT
COMPLEMENTARY OUTPUT HALL EFFECT LATCH 互补输出霍尔效应锁存
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT
|
BCD Semiconductor Manufacturing, Ltd.
BCDSEMI
BCD Semiconductor Manufacturing Limited
|
| A1222LLHLX-T2 A1223LLHLX-T2 A1223LLHLT-T A1220ELHL |
Chopper Stabilized Precision Hall Effect Latches
MAGNETIC FIELD SENSOR-HALL EFFECT, -18-18mT, 30-60mA, RECTANGULAR, THROUGH HOLE MOUNT
|
Allegro MicroSystems
|
| HX25-P |
MAGNETIC FIELD SENSOR-HALL EFFECT, -4-4V, RECTANGULAR, THROUGH HOLE MOUNT
|
LEM HOLDING SA
|
| AH173-WL-B-B AH173-WL-B-A AH173-PL-B-A AH173-PL-B- |
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE 内部上拉霍尔效应锁存，高
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 400mV, RECTANGULAR, THROUGH HOLE MOUNT
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL EFFECT, -1.5-6mT, 0.30-0.40V, RECTANGULAR, THROUGH HOLE MOUNT
|
Diodes, Inc.
磁阻传感
Diodes Inc.
DIODES[Diodes Incorporated]
|
| HAL401SO-C |
MAGNETIC FIELD SENSOR-HALL EFFECT, -50-50mT, 2.30-1.30V, RECTANGULAR, SURFACE MOUNT
|
MICRONAS SEMICONDUCTOR HOLDING AG
|
